|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET(R) Power MOSFET D IRFZ46NS IRFZ46NL VDSS = 55V RDS(on) = 0.0165 G Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications. ID = 53A S D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V GS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 53 37 180 3.8 107 0.71 20 28 11 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. 1.4 40 Units C/W www.irf.com 1 04/08/04 IRFZ46NS/IRFZ46NL Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance V (BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 2.0 19 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID =1mA .0165 VGS =10V, ID = 28A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 28A ns RG = 12 RD = 0.98, See Fig. 10 Between lead, nH 7.5 and center of die contact 1696 VGS = 0V 407 pF VDS = 25V 110 = 1.0MHz, See Fig. 5 583152 IAS = 28A, L = 389mH Typ. 0.057 14 76 52 57 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 53 showing the A G integral reverse 180 p-n junction diode. S 1.3 V TJ = 25C, IS = 28A, VGS = 0V 67 101 ns TJ = 25C, IF = 28A 208 312 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Starting TJ = 25C, L = 389H TJ 175C. RG = 25, IAS = 28A. (See Figure 12) max. junction temperature. ( See fig. 11 ) Pulse width 400s; duty cycle 2%. Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents operation outside rated limits. ISD 28A, di/dt 220A/s, VDD V(BR)DSS, This is a calculated value limited to TJ = 175C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ46NS/IRFZ46NL 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 10 10 4.5V 4.5V 1 0.1 20s PULSE WIDTH TJ = 25C TC = 25C 1 10 A 100 1 0.1 20s PULSE WIDTH TJ = 175C TC = 175C 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 46A I D , Drain-to-Source Current (A) 2.0 100 TJ = 25C TJ = 175C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ46NS/IRFZ46NL 2800 2400 C, Capacitance (pF) 2000 Ciss 1600 Coss 1200 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 28A V DS = 44V V DS = 28V 16 12 8 800 Crss 400 4 0 1 10 100 A 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) 100 100 10s TJ = 175C TJ = 25C 10 100s 10 1ms 1 0.4 0.8 1.2 1.6 VGS = 0V 2.0 A 1 1 TC = 25C TJ = 175C Single Pulse 10 10ms 2.4 A 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ46NS/IRFZ46NL V DS 60 50 ID, Drain Current (A) RD V GS Limited By Package RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. VDD + 40 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ46NS/IRFZ46NL E AS , Single Pulse Avalanche Energy (mJ) 500 L VDS D.U.T. RG + V - DD 10 V TOP 400 BOTTOM ID 11A 20A 28A 300 IAS tp 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 100 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ46NS/IRFZ46NL Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ46NS/IRFZ46NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450) NOTES: 1 2 3 4 DIMENSIONS AFTER SOLDER DIP. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION : INCH. HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S 9246 9B 1M A DATE CODE (YYWW) YY = YEAR WW = WEEK www.irf.com 8 IRFZ46NS/IRFZ46NL 2- COLLECTOR 3- EMITTER 1- GATE S @ 7 H V I A U S 6 Q @ 9 P 8 A @ U 6 9 & ( ( A 2 A & A S 6 @ ( A F @ @ X IGBT 8 A @ DI G Dimensions are shown in millimeters (inches) TO-262 Part Marking Information G 6 I DP U 6 I S @ U DI S D@ DA U 8 @ S & ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6 G " " G DS A I 6 A T D A DT C U ) @ G Q H 6 Y @ ( ' & A @ 9 P 8 A U P G P B P G G 7 H @ T T 6 @ 9 P 8 A U P G TO-262 Package Outline A 8 A A @ DI G A G 7 H @ T T 6 A @ C U A DI www.irf.com 9 IRFZ46NS/IRFZ46NL Tape & Reel Information D2Pak TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/04 10 www.irf.com |
Price & Availability of IRFZ46NL |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |